Accession Number : AD0737668

Title :   Investigation of Ion Beam Techniques for Microelectronics.

Descriptive Note : Final rept. 18 Apr 70-20 Aug 71,

Corporate Author : BOEING CO SEATTLE WASH AEROSPACE GROUP

Personal Author(s) : Shepherd,William B.

Report Date : 30 SEP 1971

Pagination or Media Count : 75

Abstract : Continued studies related to the use of low energy ion deposition for application to microelectronics are discussed. The reactive deposition of Cu(+) ions in O2, H2S and H2O ambients was investigated to determine the role of ion energy in promoting or altering the reaction between the ions and gases at a substrate surface. An apparent reaction was observed between Cu(+) and O2 or H2S, but not with H2O. The reactions were dependent upon the ion energy. Measurements of the optical and physical properties of the resultant films showed them to be substantially metallic in spite of considerable gas absorption during deposition. Results of measurements of the sorption of energetic Au ions by thin SiO2 surfaces are reported. (Author)

Descriptors :   (*VAPOR PLATING, *ION BOMBARDMENT), (*COPPER, VAPOR PLATING), (*ALUMINUM, VAPOR PLATING), FILMS, SPUTTERING, THICKNESS, SURFACES, MICROELECTRONICS, KINETIC ENERGY, OXYGEN, SILICON DIOXIDE, GOLD, OPTICAL PROPERTIES, ADSORPTION, ELECTRON MICROSCOPY, ION BEAMS, PARAMAGNETIC RESONANCE

Subject Categories : Physical Chemistry
      Coatings, Colorants and Finishes

Distribution Statement : APPROVED FOR PUBLIC RELEASE