Accession Number : AD0738631

Title :   Narrow Gap Semiconductors Pb(1-x)Sn(x)Te and Pb(1-y)Sn(y)Se.

Descriptive Note : Final rept. 1 Jun 70-30 Sep 71,

Corporate Author : CALIFORNIA UNIV LOS ANGELES SCHOOL OF ENGINEERING AND APPLIED SCIENCE

Personal Author(s) : Tao,Tien F. ; Wang,C. C.

Report Date : DEC 1971

Pagination or Media Count : 173

Abstract : The purpose of this study is to develop a material process to grow device-grade Pb-Sn chalcogenide alloy thin films on insulating substrates for long wavelength infrared (LWIR) applications; to characterize their semiconductor behavior; and, to determine material properties of Pb-Sn chalcogenide alloys. (Author)

Descriptors :   (*SEMICONDUCTING FILMS, ELECTRICAL PROPERTIES), (*INFRARED DETECTORS, SEMICONDUCTOR DEVICES), VAPOR PLATING, MANUFACTURING, LEAD COMPOUNDS, TIN COMPOUNDS, TELLURIDES, SELENIDES, X RAY DIFFRACTION, OPTICAL PROPERTIES, ANNEALING, PROTON BOMBARDMENT, PHOTOCONDUCTIVITY, MAGNETOOPTICS, HALL EFFECT

Subject Categories : Infrared Detection and Detectors
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE