Accession Number : AD0738660

Title :   Conduction in Al2O3 Films and Charge Storage in MAOS Structures,

Corporate Author : TORONTO UNIV (ONTARIO) DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Salama,C. A. T.

Report Date : 01 AUG 1971

Pagination or Media Count : 7

Abstract : The conduction characteristics of aluminum oxide films deposited by rf sputtering on silicon substrates and ranging from 400-600A in thickness were measured over a range of temperatures. It was found that the current transport is essentially bulk limited and independent of the film thickness. the electrode material, and the polarity of the electrode. The three processes which affect the conduction through these films were found to be: Poole-Frenkel emission, field ionization, and trap hopping. The various parameters such as temperature and gate electrode affecting the charge storage in MAOS memory elements, were investigated using an automatic measurement set up and were related to the conduction characteristics of the two insulating layers. The memory elements consisted of 400-600A thick Al2O3 films deposited by rf sputtering on thermally grown SiO2 layers 50A thick. The charging and memory retention characteristics of the MAOS structure were also investigated. The effect of charge transport across the silicon dioxide on the surface state density at the Si-SiO2 interface was also observed. (Author)

Descriptors :   (*DIELECTRIC FILMS, ELECTRICAL CONDUCTIVITY), (*THIN FILM STORAGE DEVICES, ELECTRICAL CONDUCTIVITY), METAL FILMS, ALUMINUM COMPOUNDS, OXIDES, SUBSTRATES, SILICON, CANADA

Subject Categories : Computer Hardware
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE