Accession Number : AD0738661

Title :   Characterization of Surface States at the Si-SiO2 Interface Using the Quasi-Static Technique,

Corporate Author : TORONTO UNIV (ONTARIO) DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Fogels,E. A. ; Salama,C. A. T.

Report Date : 06 MAY 1971

Pagination or Media Count : 6

Abstract : The quasi-static technique is used to investigate the effect of processing parameters on the surface-state density at the silicon-thermally grown silicon dioxide interface. The determination of the constant required for the evaluation of surface potential from equilibrium C-V data is discussed. A rapid method of estimating the midgap density of surface states is also described. The dependence of surface-state density on substrate orientation, type of oxide growth, high-temperature annealing in nitrogen, low-temperature heat treatment in forming gas, and temperature of oxide growth are discussed. The interdependence between the fixed oxide charge and the surface-state density is also investigated. (Author)

Descriptors :   (*SEMICONDUCTING FILMS, INTERFACES), (*SILICON DIOXIDE, DEPOSITION), SUBSTRATES, SURFACE PROPERTIES, BAND THEORY OF SOLIDS, ANNEALING, CRYSTAL GROWTH, DENSITY, ELECTRICAL PROPERTIES, CANADA

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE