Accession Number : AD0738690

Title :   Memory Switching and Crystallization in Selenium,

Corporate Author : MCGILL UNIV MONTREAL (QUEBEC) DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Armitage,D. ; Champness,C. H.

Report Date : 14 JUN 1971

Pagination or Media Count : 8

Abstract : A memory switching effect in bulk polycrystalline selenium has been investigated. I-V characteristics are related to structural changes revealed by microscopic examination, where it is shown that the switching mechanism is a crystal-amorphous phase transformation. A molten zone, produced by a direct current through the sample, undergoes a polarity dependent motion. The zone motion is discussed in terms of field-assisted ionic diffusion and it is suggested that this could be made into a useful crystal growing technique. (Author)

Descriptors :   (*SELENIUM, ELECTRICAL RESISTANCE), (*SEMICONDUCTORS, ELECTRIC SWITCHES), ELECTRICAL PROPERTIES, TEST METHODS, CANADA

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE