Accession Number : AD0739489

Title :   Experimental Study of Germanium Cell Performance with Erbium Oxide and Silicon Carbide Radiators.

Descriptive Note : Research and development technical rept.,

Corporate Author : ARMY ELECTRONICS COMMAND FORT MONMOUTH N J

Personal Author(s) : Guazzoni,G. E. ; Kittl,E.

Report Date : FEB 1972

Pagination or Media Count : 34

Abstract : The results of an experimental investigation are reported covering measured data of the output of a germanium (Ge) photovoltaic cell of the N/P(+) alloyed junction type and data on the radiancy of erbium oxide (Er2O3) and silicon carbide (SiC) thermal emitters in the temperature range of 1200-2000K. A range of incident radiation on the cell from 0 to 5 W/sq cm was used for both types of radiators. Cell output performance is presented in the ratio I(sc)/H(T) which represents the short circuit current output of the cell divided by the total incident radiation. This ratio, called the chromatic response of the Ge-cell, strongly depends on the spectral match between incident radiation and spectral response of the cell. It is concluded that the use of Er2O3 as a radiator material can provide, depending on the operating temperature, a 50-100% increase in the conversion efficiency of a Ge-cell thermophotovoltaic-generator when compared with SiC. (Author)

Descriptors :   (*PHOTOELECTRIC CELLS(SEMICONDUCTOR), *GERMANIUM), (*ERBIUM COMPOUNDS, THERMAL RADIATION), (*SILICON CARBIDES, THERMAL RADIATION), INFRARED RADIATION, ENERGY CONVERSION, RESPONSE

Subject Categories : Electric Power Production and Distribution

Distribution Statement : APPROVED FOR PUBLIC RELEASE