Accession Number : AD0739613

Title :   Spectral Analysis of Photoemissive Yields in GaAs and Related Crystals,

Corporate Author : LOCKHEED MISSILES AND SPACE CO PALO ALTO CALIF PALO ALTO RESEARCH LAB

Personal Author(s) : Herman,Frank ; Spicer,William E.

Report Date : 1971

Pagination or Media Count : 9

Abstract : The strongest optical reflectivity peak at 5 eV in GaAs and the corresponding dip at 5 eV in the photoemissive yield curve have long been associated with X(5v) to X(1c) transitions. Since recent experimental and theoretical studies indicate that X(1c) - X(5v) = 4.2 plus or minus 0.1 eV, this association is invalid. Accordingly, most of the earlier estimates of X(1c) - X(5v) and X(3c) - X(5v) in GaAs and related crystals will have to be revised, as will empirical band models based on these estimates. An improved energy band model for GaAs is reported. (Author)

Descriptors :   (*SEMICONDUCTORS, PHOTOELECTRIC EFFECT), (*GALLIUM ARSENIDES, *BAND THEORY OF SOLIDS), ATOMIC ENERGY LEVELS, ELECTRON TRANSITIONS

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE