Accession Number : AD0739978
Title : Recombination Studies and Radiative Transitions in Semiconductors.
Descriptive Note : Final scientific rept. 1 Feb 67-31 Jan 72,
Corporate Author : FLORIDA ATLANTIC UNIV BOCA RATON DEPT OF PHYSICS
Personal Author(s) : Blakemore,John S. ; Messenger,Roger A.
Report Date : FEB 1972
Pagination or Media Count : 12
Abstract : The report is concerned with electron generation and recombination processes in semiconductors. Some work is described with germanium and purified monocrystal tellurium, but emphasis is on roles of deep flaw levels in silicon and gallium arsenide. Photoionization properties, and hole capture as determined from photoconductance, are measured for indium in silicon, and for manganese, cobalt, and nickel in gallium arsenide. Experimental results are correlated with theoretical models for deep flaw states. (Author)
Descriptors : (*SEMICONDUCTORS, SCIENTIFIC RESEARCH), DEFECTS(MATERIALS), GERMANIUM, SILICON, GALLIUM ARSENIDES, TELLURIUM, RECOMBINATION REACTIONS, PHOTOCONDUCTIVITY, HALL EFFECT, IMPURITIES
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE