Accession Number : AD0740183

Title :   High-Brightness Electroluminescent Diodes.

Descriptive Note : Annual rept. 1 Jan-31 Dec 71,

Corporate Author : RCA LABS PRINCETON N J

Personal Author(s) : Nuese,Charles J. ; Sigai,Andrew G. ; Kudman,Irwin

Report Date : JAN 1972

Pagination or Media Count : 73

Abstract : The purpose of the investigation discussed in this report was to prepare In(1-x)Ga(x)P material from which high-brightness electroluminescent diodes could be made. Throughout the course of the investigation, three growth techniques were used to prepare material for this purpose. The authors examine in detail the energy band structure of In(1-x)Ga(x)P. In the next section, In(1-x)Ga(x)P prepared by a zone-leveling and a traveling-solvent growth technique is considered. The fabrication and characteristics of p-n junctions formed by Zn diffusion into n-type melt-grown In(1-x)Ga(x)P are treated also. The principles of vapor-phase growth, and many refinements in this technology have been carried out. The high-brightness diodes and orange-light-emitting junction lasers mentioned above are described in detail.

Descriptors :   (*SEMICONDUCTOR DIODES, ELECTROLUMINESCENCE), (*INFRARED LASERS, SEMICONDUCTOR DIODES), INDIUM COMPOUNDS, GALLIUM COMPOUNDS, PHOSPHIDES, CRYSTAL GROWTH, EFFICIENCY, BRIGHTNESS, BAND THEORY OF SOLIDS, OPTICAL PROPERTIES

Subject Categories : Lasers and Masers
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE