Accession Number : AD0740226
Title : Second Breakdown and Damage in Semiconductor Junction Devices.
Descriptive Note : Final rept.,
Corporate Author : AUBURN UNIV ALA DEPT OF PHYSICS
Personal Author(s) : Budenstein,Paul P. ; Pontius,Duane H. ; Smith,Wallace B.
Report Date : APR 1972
Pagination or Media Count : 174
Abstract : The nature of second breakdown in junction devices and the relationship between second breakdown and damage are investigated both experimentally and theoretically. The experiments were performed on silicon-on-sapphire diodes using the stroboscopic method of Sunshine. Diodes of different geometry and different base doping were included so the effects of these parameters on second breakdown could be determined. The stroboscopic technique allows the temperature configuration over the diode to be determined with a spatial resolution of several microns and a temporal resolution of about 20 ns. Second breakdown can be shown to involve three stages: nucleation of a filament, growth of a relatively broad filament across the high-resistivity region, and growth of a second filament interior to the first wherein material is in a molten state. Theoretical treatments are given to the nucleation, melt transition, and filamentation aspects of the problem. (Author)
Descriptors : (*TRANSISTORS, FAILURE(ELECTRONICS)), (*SEMICONDUCTOR DIODES, FAILURE(ELECTRONICS)), ELECTRICAL PROPERTIES, THERMAL RADIATION, DAMAGE, RADIATION EFFECTS, SILICON, SEMICONDUCTING FILMS, OPTICAL PROPERTIES, TEST METHODS, TEST EQUIPMENT, COMPUTER PROGRAMS
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE