Accession Number : AD0741348

Title :   Optoelectronic Electron Emitter.

Descriptive Note : Semiannual rept. 15 Apr-31 Sep 71,

Corporate Author : RCA LABS PRINCETON N J

Personal Author(s) : Schade,Horst ; Nelson,Herbert ; Kressel,Henry

Report Date : APR 1972

Pagination or Media Count : 31

Abstract : A greatly improved cold-cathode emitter was developed based on the use of liquid-phase epitaxy, (AlGa)As-GaAs heterojunctions, and negative-electron-affinity GaAs surfaces. An important part of the device is the lateral confinement of the current flow to the desired emitting surface by a novel fabrication technique involving the selective diffusion of Zn. It was shown for the first time that III-V semiconductor cold-cathodes are capable of dc operation at efficiencies and emission-current densities of practical interest, and record values were obtained which exceeded the objectives of this program. (Author)

Descriptors :   (*PHOTOCATHODES, SEMICONDUCTOR DEVICES), GALLIUM ARSENIDES, ELECTROLUMINESCENCE, PHOTODIODES

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE