Accession Number : AD0741780
Title : Research in Ferromagnetics: Domain Tip Propagation Devices.
Descriptive Note : Final rept. 28 Feb-31 Dec 71,
Corporate Author : CAMBRIDGE MEMORIES INC NEWTONVILLE MASS MAGNETIC THIN FILM DEVELOPMENT DEPT
Personal Author(s) : Jauvtis,Harvey I. ; Spain,Robert J.
Report Date : 31 JAN 1972
Pagination or Media Count : 92
Abstract : The DOT aluminum underlayer was investigated. Experimental results for the coercivity of the film over aluminum as a function of aluminum and magnetic thicknesses and aluminum deposition substrate temperature are presented. Additional studies on the subject of DOT inductive readout are described. A new technique for doubling the signal amplitude is illustrated and the channel structure optimized. DOT element evaluation is discussed. The effect of channel width, magnetic film thickness and aluminum deposition substrate temperature on channel propagation thresholds is considered. Two DOT memory systems are described. One a shift register, the other a BORAM (Block Oriented Random Access Memory) demonstrate many of the features of the DOT technique. Nuclear radiation experiments are discussed. A correction of a previously reported result is presented. (Author)
Descriptors : (*THIN FILM STORAGE DEVICES, MANUFACTURING), METAL FILMS, SUBSTRATES, ALUMINUM, SHIFT REGISTERS, VAPOR PLATING, PERFORMANCE(ENGINEERING), DAMAGE, RADIATION EFFECTS, NEUTRON REACTIONS, FAST NEUTRONS, TEST METHODS
Subject Categories : Computer Hardware
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE