Accession Number : AD0741859

Title :   Crystallization of Thin Films,

Corporate Author : ARMY FOREIGN SCIENCE AND TECHNOLOGY CENTER CHARLOTTESVILLE VA

Personal Author(s) : Arifov,U. A.

Report Date : 21 MAR 1972

Pagination or Media Count : 241

Abstract : The collection considers the state of the research into epitaxial growth processes of semiconductor layers, contains material on electrochemical methods of obtaining fine films, the results of studies in diffusion, the migration and distribution of impurities, and discusses the electrophysical characteristics and structure of the thin films and of radiation effects in them. In connection with the problem of the effect of the films on the structural peculiarities of the substrates, and with the problem of self-alloying, the results of a study of the characteristics of monocrystals used as substrates and having an independent significance are presented. (Author)

Descriptors :   (*SEMICONDUCTING FILMS, *EPITAXIAL GROWTH), (*SILICON, EPITAXIAL GROWTH), IMPURITIES, PHOSPHORUS, ANTIMONY, ELECTRICAL PROPERTIES, NEUTRON ACTIVATION, SINGLE CRYSTALS, TELLURIUM, NITROGEN, HYDROGEN, USSR

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE