Accession Number : AD0743196
Title : Advanced Concepts of Microwave Generation and Control in Solids.
Descriptive Note : Quarterly progress rept. no. 5, 1 Oct-31 Dec 71,
Corporate Author : CORNELL UNIV ITHACA N Y SCHOOL OF ELECTRICAL ENGINEERING
Personal Author(s) : Dalman,G. C. ; Eastman,L. F. ; Lee,C. A. ; Frey,J.
Report Date : MAR 1972
Pagination or Media Count : 133
Abstract : The report deals with the progress made during the fifth quarterly period of a solid state microwave oscillator and amplifier research and development program. Discussed is the progress on the Gunn effect and related research. The progress made on a program on microwave transit time devices is also described. The following specific topics are reviewed: optimum structures for high average power TRAPATT devices; GaAs Schottky barrier avalanche diodes; nonlinearities of IMPATT reflection amplifiers; integrated IMPATT oscillators; integrated TRAPATT oscillators; high-frequency high-efficiency avalanche oscillations; high frequency PTI microwave oscillators; pulsed PTI microwave oscillators; power combining circuit studies. Finally, the progress made on the studies of solid state materials for microwave devices are reported. The topics include: ion implantation and diffusion; vacuum epitaxial growth in silicon; and ionization rates in gallium arsenide. (Author)
Descriptors : (*MICROWAVE OSCILLATORS, *SEMICONDUCTOR DIODES), MICROWAVE AMPLIFIERS, HARMONIC GENERATORS, AVALANCHE DIODES, SILICON, ION BOMBARDMENT, EPITAXIAL GROWTH, GALLIUM ARSENIDES, IONIZATION
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE