Accession Number : AD0743792

Title :   Studies on Memory Switching in Bulk Selenium,

Corporate Author : MCGILL UNIV MONTREAL (QUEBEC) DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Champness,C. H. ; Armitage,D.

Report Date : 1971

Pagination or Media Count : 8

Abstract : A sample of bulk crystallized selenium containing embedded metal electrodes can be switched to a lower conductance state by the application of sufficient voltage and switched back by reapplying voltage. Photomicrographical studies show that the conductance drop is due to the formation of a high resistance amorphous layer normal to the current direction between the electrodes arising from localized melting of the trigonal selenium. Recovery to the higher conductance state represents recrystallization of the amorphous wall. (Author)

Descriptors :   (*SELENIUM, ELECTRICAL CONDUCTIVITY), SEMICONDUCTORS, ELECTRIC SWITCHES, MELTING, PHOTOMICROGRAPHY, CANADA

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE