Accession Number : AD0743949
Title : Optically Controlled PMOS (P- Metal Oxide Semiconductors) Circuits.
Descriptive Note : Final scientific rept. 1 Jan 68-29 Feb 72,
Corporate Author : RCA LABS PRINCETON N J
Personal Author(s) : Kosonocky,Walter F.
Report Date : MAR 1972
Pagination or Media Count : 50
Abstract : Design and experimental data are presented on the operation of basic cells for optically modifiable PMOS logic arrays and for three different types of optically loadable PMOS memory cells. The experimental data obtained in the study of the operation of the optically modifiable logic cells and the symmetrical, optically loadable, memory cell (having only one photodiode) showed that, for reliable detection, the optical signal required corresponds to a photogenerated charge in the range of 1 to 5 pC. However, a balanced, or symmetrical, digital light sensor can be more sensitive by two orders of magnitude, requiring detected charge signal of 0.05 to 0.01 pC. Experimental data are presented on the operation of asynchronous PMOS photosensors applicable to detection of continuous optical signals that employ charge-pumping for biasing of the photodiodes. (Author)
Descriptors : (*LOGIC CIRCUITS, PHOTODIODES), (*DATA STORAGE SYSTEMS, FEASIBILITY STUDIES), INTEGRATED CIRCUITS, FIELD EFFECT TRANSISTORS, MANUFACTURING, OPTICAL PROPERTIES, ELECTRICAL PROPERTIES
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE