Accession Number : AD0744163

Title :   Stress-Measuring Sensor,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Elinson,M. I. ; Pokalyakin,V. I. ; Stepanov,G. V.

Report Date : 05 APR 1972

Pagination or Media Count : 7

Abstract : A sensitivity index of up to 10-9 can be achieved for loads of a few milligrams by pressing a needle of 1 mu m radius against a semiconductor load cell. A semiconductor of the N type is coated with thin metal film and a depletion layer between the two has distinct rectifying properties. A bias voltage applied from a DC source in a reverse direction through a contact and an ohmic content causes a slight inverse current flow which is governed by the high barrier voltage at the depletion layer. Pressure by a needle reduces the width of the contact barrier and increases the inverse current sharply. (Author)

Descriptors :   (*DETECTORS, STRESSES), SEMICONDUCTOR DEVICES, METAL FILMS, MEASURING INSTRUMENTS, PATENTS, USSR

Subject Categories : Test Facilities, Equipment and Methods

Distribution Statement : APPROVED FOR PUBLIC RELEASE