Accession Number : AD0744164

Title :   A Method for Epitaxial Crystal Growth,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Dorfman,V. F.

Report Date : 21 MAR 1972

Pagination or Media Count : 7

Abstract : A method for epitaxial growth of crystals by heating the starting substance with subsequent crystallization of the end product from a gas phase fed to the backing is discussed.

Descriptors :   (*EPITAXIAL GROWTH, PATENTS), (*SEMICONDUCTORS, EPITAXIAL GROWTH), MANUFACTURING, SINGLE CRYSTALS, GERMANIUM, GALLIUM ARSENIDES, GALLIUM COMPOUNDS, PHOSPHIDES, USSR

Subject Categories : Fabrication Metallurgy
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE