
Accession Number : AD0745772
Title : LargeSignal Modeling of Bipolar Transistors for ComputerAided Circuit Analysis.
Descriptive Note : Technical rept.,
Corporate Author : STANFORD UNIV CALIF STANFORD ELECTRONICS LABS
Personal Author(s) : McBride,Laurence Charles
Report Date : AUG 1971
Pagination or Media Count : 122
Abstract : Improved largesignal models for the bipolar transistor are derived which are suitable for dc and transient computeraided circuit analysis. The models are developed from the results of a twodimensional analysis which yields the normalactive dc characteristics of the intrinsic portion of the transistor. Each of the models is formulated in terms of a measurable set of parameters which can theoretically be related to the lowlevel electrical parameters of the transistor and hence to its basic geometrical and physical characteristics. Based upon the dc model, two transient models are derived which correspond to one and twosection approximations to the distributed nature of the intrinsic base as seen from the emitterbase terminals. The primary attribute of the singlesection model, which corresponds in its complexity to commonly employed models, is its simplicity.
Descriptors : (*FIELD EFFECT TRANSISTORS, MATHEMATICAL MODELS), INTEGRATED CIRCUITS, NUMERICAL ANALYSIS, TRANSIENTS
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE