Accession Number : AD0746369

Title :   Two-Phase M.N.O.S.(Metal Nitride Oxide Semiconductor) Charge-Coupled Device,

Corporate Author : TORONTO UNIV (ONTARIO) DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Salama,C. A. T.

Report Date : 29 DEC 1971

Pagination or Media Count : 2

Abstract : A 2-phase charge-coupled device (c.c.d) is proposed. It makes use of charge storage in an m.n.o.s. structure to define in the silicon substrate the asymmetrical potential wells required for unidirectional charge flow. The fabrication and operation of the device are described. The structure permits substantial simplification of the fabrication method as compared with other c.c.d.s. (Author)

Descriptors :   (*SEMICONDUCTOR DEVICES, ELECTRICAL PROPERTIES), MANUFACTURING, SILICON DIOXIDE, NITRIDES, ALUMINUM, ELECTRICAL CONDUCTIVITY, CANADA

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE