Accession Number : AD0746373

Title :   Characteristics of rf Sputtered Barium Titanate Films on Silicon,

Corporate Author : TORONTO UNIV (ONTARIO) DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Salama,C. A. T. ; Siciunas,E.

Report Date : 27 JUL 1971

Pagination or Media Count : 6

Abstract : The physical and electrical properties of barium titanate films approximately 1 micrometer thick, prepared by rf sputtering onto silicon substrates in both pure argon and 95% argon-5% oxygen glow discharges were investigated. The deposition rate, crystal structure, and refractive index of the films were investigated as a function of deposition temperature and sputtering gas. The electrical characteristics of the films, including the dielectric constant, loss tangent, conductivity, insulator bulk charge, charge storage at the BaTiO3-SiO2 interface, and ferroelectricity were also investigated. (Author)

Descriptors :   (*DIELECTRIC FILMS, ELECTRICAL PROPERTIES), SPUTTERING, SILICON DIOXIDE, SUBSTRATES, CRYSTAL STRUCTURE, THERMAL EXPANSION, REFRACTIVE INDEX, FERROELECTRIC CRYSTALS, DIELECTRIC PROPERTIES, ELECTRICAL CONDUCTIVITY, BARIUM COMPOUNDS, TITANATES, INTERFACES, CANADA

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE