Accession Number : AD0746999

Title :   Interface Phenomena - Integrated Circuits Oxides.

Descriptive Note : Semi-annual rept. no. 2, 1 Jan-30 Jun 71,

Corporate Author : CALIFORNIA UNIV LOS ANGELES SCHOOL OF ENGINEERING AND APPLIED SCIENCE

Personal Author(s) : Viswanathan,Cadambanguidi R.

Report Date : MAY 1972

Pagination or Media Count : 31

Abstract : During the second half year of the contract, work was continued on the ion transport in silicon dioxide. Further work on the model in which the potential wells are distributed over a range of energy walls was carried out. Some preliminary results have been obtained on the transport phenomena which prove to be very interesting. During this period, it was also shown that the direct determination of the built-in-voltage in MOS structures using the photoelectric technique is possible. A photoelectric method of storing charge in a floating gate MOS memory has been considered. (Author)

Descriptors :   (*SILICON DIOXIDE, IONIC CURRENT), (*INTEGRATED CIRCUITS, SILICON DIOXIDE), TUNNELING(ELECTRONICS), WORK FUNCTIONS, PHOTOCONDUCTIVITY, MEMORY DEVICES, PHOTOELECTRIC EFFECT, INTERFACES

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE