Accession Number : AD0747435
Title : Interface Phenomena Integrated Circuits Oxides.
Descriptive Note : Semiannual rept. no. 3, 30 Jun-31 Dec 71,
Corporate Author : CALIFORNIA UNIV LOS ANGELES SCHOOL OF ENGINEERING AND APPLIED SCIENCE
Personal Author(s) : Viswanathan,Cadambanguidi R.
Report Date : MAY 1972
Pagination or Media Count : 19
Abstract : The analytical investigation of ion migration in SiO2 layers in a MOS structure was continued and results of numerical computations are given. Progress in the experimental investigation of ion transport in (a) a SiO2 layer in a symmetrical structure of Si - SiO2 - Si, (b) insulating layers like Al2O3 on silicon and other semiconductor electrodes is also described. A method has been developed to eliminate the sodium ions from the oxide layers by an initial bias-temperature treatment followed by an etching process where approximately 100 A thickness of oxide is removed. Results are described on a change in the dielectric constant of an oxide layer after ionizing radiation possibly due to compaction. (Author)
Descriptors : (*SILICON DIOXIDE, *IONIC CURRENT), (*INTEGRATED CIRCUITS, SILICON DIOXIDE), TUNNELING(ELECTRONICS), PHOTOELECTRIC EFFECT, PHOTOCONDUCTIVITY, DAMAGE, RADIATION EFFECTS, COBALT, INTERFACES
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE