Accession Number : AD0749135
Title : Room Temperature Injection Luminescence in II-VI Semiconductors.
Descriptive Note : Final rept. 1 Dec 69-30 Nov 71,
Corporate Author : BOWMAR CANADA LTD OTTAWA (ONTARIO) OPTOELECTRONICS DIV
Personal Author(s) : Kennedy,David L. ; Bradfield,Leonard H. W.
Report Date : APR 1972
Pagination or Media Count : 193
Abstract : The luminescent properties of ZnSe and ZnS crystals prepared by a number of techniques were investigated and compared with the electroluminescence properties of M-s and M-i-s device structures. Experiments relating to the preparation of heterojunction structures by the application of close-spaced epitaxial techniques to the vapor deposition of ZnSe films on compatible substrates were also conducted and the potential application of III-V - II-VI alloy crystals to this type of device evaluated. A method was developed to prepare heterstructures by solution growth, of GaAs and ZnSe, GaP on ZnS and GaP on ZnSe. Growth of wafers GaInP for application to heterojunction structures was investigated using similar solution growth methods. In the evaluation of the optical properties of heterojunction structures, a high-resolution spectrograph was developed. (Author)
Descriptors : (*SEMICONDUCTORS, *ELECTROLUMINESCENCE), (*ZINC COMPOUNDS, *CRYSTAL GROWTH), SELENIDES, TELLURIDES, VAPOR PLATING, EPITAXIAL GROWTH, BAND THEORY OF SOLIDS, SEMICONDUCTING FILMS, ANNEALING, DOPING, CANADA
Subject Categories : Optics
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE