Accession Number : AD0749503

Title :   Trends in Microwave Solid State Power Generation.

Descriptive Note : Technical rept.,

Corporate Author : ROME AIR DEVELOPMENT CENTER GRIFFISS AFB N Y

Personal Author(s) : McNamara,John V.

Report Date : AUG 1972

Pagination or Media Count : 30

Abstract : The power-frequency performance of microwave transistors, Gunn-Effect Impact Avalanche Transit Time (IMPATT), Trapped Plasma Avalanche Triggered Transit (TRAPATT), and Limited Spacecharge Accumulation (LSA) devices is graphically presented. Based on foreseeable advances in technology, the 1975 expected performance, with a brief discussion of underlying developments as of September 1971, is included. Important aspects of device performance in addition to power are being studied at Cornell University and the University of Michigan under contract with Rome Air Development Center. Two results from these contracts are summarized: The Effect of Temperature on the Operation of an IMPATT Diode, and Avalanche Region Width in Various Structures of IMPATT Diodes. (Author)

Descriptors :   (*MICROWAVE OSCILLATORS, *SEMICONDUCTOR DEVICES), AVALANCHE DIODES, TRANSISTORS, RADIOFREQUENCY GENERATORS, MICROWAVE EQUIPMENT, RADIOFREQUENCY POWER, EFFICIENCY, BANDWIDTH, THERMAL STABILITY, NOISE(RADIO), RELIABILITY(ELECTRONICS), GALLIUM ARSENIDES, SILICON

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE