Accession Number : AD0749631

Title :   Use of Gallium Arsenide Crystals to Modulate Emission on 10.6 Micrometers Wavelength,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Koblova,M. M. ; Nikolaev,I. V.

Report Date : 01 AUG 1972

Pagination or Media Count : 9

Abstract : An investigation was made into the transparency of high resistance specimens and the electro optical effect in them in connection with the feasibility of using GaAs crystals for modulating laser emission with a wavelength of 10.6 Mu. The results show that an IR modulator can be developed on the basis of GaAs crystals which operate at high layer power levels, in particular when cooling is used (the authors used a thermoelectric cooler). A depth of modulation of 60 to 70 percent is achieved at a voltage with an amplitude of 1.5 kv. (Author)

Descriptors :   (*GAS LASERS, INFRARED WINDOWS), (*INFRARED RADIATION, MODULATION), (*GALLIUM ARSENIDES, ELECTROOPTICS), INFRARED LASERS, COHERENT RADIATION, POLARIZATION, AMPLITUDE MODULATION, USSR

Subject Categories : Lasers and Masers
      Optics

Distribution Statement : APPROVED FOR PUBLIC RELEASE