Accession Number : AD0749791
Title : Electron Beam Semiconductor Amplifier (L-Band).
Descriptive Note : Triannual rept. no. 5, 1 Nov 71-29 Feb 72,
Corporate Author : WATKINS-JOHNSON CO PALO ALTO CALIF
Personal Author(s) : Long,James A.
Report Date : OCT 1972
Pagination or Media Count : 27
Abstract : The goal of the program is to design, develop, fabricate and test exploratory development models of an L-band, RF pulse amplifier capable of 2 kilowatts peak RF output power at 1300 MHz plus or minus 10%, with a 25 dB power gain at 50% efficiency. The principal effort during this reporting period has been concentrated on the fabrication and testing of the first developmental RF amplifier. Tuning tests on this amplier have shown that there is an unexpected loss in the target structure. This results in inefficient operation at frequencies above 100 MHz and has, so far, prevented the achievement of the design level of power output at the specified operating frequency. (Author)
Descriptors : (*MICROWAVE AMPLIFIERS, *PULSE AMPLIFIERS), L BAND, ELECTRON TUBE TARGETS, SEMICONDUCTOR DIODES, ELECTRON GUNS, MANUFACTURING
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE