Accession Number : AD0750034
Title : The Effect of Flaws on the Properties of Silicon Nitride Films,
Corporate Author : DEFENCE RESEARCH INFORMATION CENTRE ORPINGTON (ENGLAND)
Personal Author(s) : Synorov,V. F.
Report Date : SEP 1972
Pagination or Media Count : 6
Abstract : Silicon nitride is used as the protective coating for silicon semiconductor instruments. Films of Si3N4 have a number of favorable qualities (chemical, electrical, mechanical and masking). However, these qualities are to a great extent dependant on the method and conditions in which they are obtained. The most significant shortcoming is the charge instability apparent at room temperatures. Charge instability can generally be explained by the presence of electrically charged centers. These centers may be extrinsic ionized atoms, which drift in an applied electrical field, or various structural flaws. For an explanation of the causes of flaws in amorphic films of silicon nitride, the authors studied a model of the three dimensional compound Si3N4 with flawed covalent bonds.
Descriptors : (*SILICON COMPOUNDS, *CRYSTAL DEFECTS), (*SEMICONDUCTOR DEVICES, DIELECTRIC FILMS), NITRIDES, CHEMICAL BONDS, ELECTRICAL CONDUCTIVITY, USSR
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE