Accession Number : AD0750506

Title :   Study of the Nature of a p-n Heterogeneous Junction in a CdSe Monocrystal Obtained by the Gas Transport Method,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Mamedova,G. A. ; Bakirov,M. Ya.

Report Date : 02 AUG 1972

Pagination or Media Count : 10

Abstract : CdSe is one of the effective materials for the creation of photoelectric converters. The paper is concerned with a study of the nature of the p-n-junction in a CdSe monocrystal. The monocrystals used in this project were grown by the gas transport method. They were black in color, lobe-shaped with an area of 1 to 4 times to the (-2) power/sq cm and a thickness of 0.01-0.03 cm, possessed electron conductivity, a specific resistance at room temperature of 130-150 ohms/cm, an electron concentration of n(e) about 10 to the 16th power cc, and a mobility of eta(e) about 300 sq cm/v-s.

Descriptors :   (*CADMIUM SELENIDES, ELECTRICAL PROPERTIES), SEMICONDUCTORS, PHOTOSENSITIVITY, ELECTRICAL CONDUCTIVITY, INTERFACES, USSR

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE