Accession Number : AD0750654

Title :   Crystal Growth from the Vapor Phase and Epitaxy: An International Conference Held in Jerusalem, 21-25 May 1972.

Descriptive Note : Conference rept.,

Corporate Author : OFFICE OF NAVAL RESEARCH LONDON (ENGLAND)

Personal Author(s) : Estermann,Immanuel

Report Date : 07 SEP 1972

Pagination or Media Count : 25

Abstract : The main topic of the Conference was the relationship of scientific progress to industrial application in the semiconductor and microelectronics fields. Subjects discussed included material transport, nucleation, and crystal growth, especially in their relation to the production of epitaxial films for use in electronic devices. One of the newer techniques presented was liquid phase epitaxy in which the epitaxial layer is precipitated from a supersaturated or supercooled solution on a crystalline substrate. Properties of various epitaxial films and methods for their evaluation were another subject for discussion. (Author)

Descriptors :   (*CRYSTAL GROWTH, SYMPOSIA), EPITAXIAL GROWTH, VAPOR PLATING, SPUTTERING, SEMICONDUCTING FILMS, ISRAEL

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE