Accession Number : AD0751052

Title :   Study the Defect Structure of the Semiconducting III - V Compounds and Other Related Materials.

Descriptive Note : Final rept. 1 Jan 68-31 Mar 72,

Corporate Author : UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Spitzer,William G.

Report Date : 27 APR 1972

Pagination or Media Count : 52

Abstract : The report summarizes the research efforts on a series of projects. In all cases the research concerns the vibrational properties of imperfect systems, and the systems include Li-diffused GaAs, Si-doped GaAs, Ge(x)Si(1-x), Ion implanted Al and P in GaAs, and Mg-doped GaAs. The results include the identification of two different Li complexes in GaAs, the determination of the Si complexes in GaAs, the lattice and local mode absorption in GeSi alloys and the ion-pairing between Mg and Li in GaAs. The information obtained is compared with results of other measurements and in some cases comprehensive models of the dominant defects are developed. (Author)

Descriptors :   (*SEMICONDUCTORS, BAND THEORY OF SOLIDS), (*GALLIUM ARSENIDES, DOPING), CRYSTAL GROWTH, DEFECTS(MATERIALS), GERMANIUM ALLOYS, SILICON, IMPURITIES, ELECTRICAL PROPERTIES, PHONONS, LITHIUM, ALUMINUM, PHOSPHORUS, MAGNESIUM

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE