Accession Number : AD0751476

Title :   Accretion of Zinc Telluride on Zinc Selenide Using the Reaction Diffusion Method,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Koren,N. N. ; Sirota,N. N.

Report Date : 17 OCT 1972

Pagination or Media Count : 8

Abstract : The article discusses a method for growing the semiconductive two-layer structures of ZnSe-ZnTe with varying degree of conductivity by changing the atmospheres (selenide, tellurium). These studies are of practical interest as ZnSe has n-conductivity and ZnTe has p-conductivity. (Author)

Descriptors :   (*SEMICONDUCTING FILMS, CRYSTAL GROWTH), ZINC COMPOUNDS, SELENIDES, TELLURIDES, SUBSTRATES, DIFFUSION BONDING, CRYSTAL STRUCTURE, USSR

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE