Accession Number : AD0751974
Title : Nonlinear Properties of IMPATT Devices.
Descriptive Note : Technical rept.,
Corporate Author : MICHIGAN UNIV ANN ARBOR ELECTRON PHYSICS LAB
Personal Author(s) : Schroeder,W. E.
Report Date : OCT 1972
Pagination or Media Count : 412
Abstract : CS OF IMPATT diodes by developing a model which occupies the middle ground between the simplified Read structure models and the very general large-scale computer simulation models. To accomplish this objective one major simplifying assumption is made: that the generation of carriers by impact ionization is localized to a region near the metallurgical junction which is relatively small compared to the total depletion width. However, the avalanche region is defined in such a manner that various realistic doping profiles and materials can be treated. Other than this assumption the carrier transport properties are kept as general as possible. The model is appropriate to the diode structures which are of the most practical importance, i.e., abrupt and hyperabrupt junctions. (Author)
Descriptors : (*AVALANCHE DIODES, MATHEMATICAL MODELS), GALLIUM ARSENIDES, NUMERICAL ANALYSIS, SILICON, ELECTRICAL PROPERTIES, X BAND, NONLINEAR SYSTEMS
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE