Accession Number : AD0752216

Title :   Microelectronic Techniques and Requirements for the Special Weapons Center Microelectronics Facility.

Descriptive Note : Technical rept. 15 Mar 67-16 Feb 71,

Corporate Author : NEW MEXICO UNIV ALBUQUERQUE DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Southward,Harold D. ; Broell,Frederick , Jr

Report Date : NOV 1972

Pagination or Media Count : 99

Abstract : The physical limitations of components used in hybrid microcircuits are reviewed. Consideration is given to effects of temperature, ionizing radiation, atomic displacement and pulsed power failure of junctions. Growth of silicon dioxide films on silicon substrates is discussed. The necessary equipment is listed and procedures for growing these films are given. Screen process printing of thick film integrated circuits is discussed, outlining all of the major steps for producing a thick film circuit. Sputtering of thin films is discussed briefly, outlining the physical differences in different types of sputtering. Facility objectives and requirements of the microelectronics facility are discussed and recommendations on equipment and personnel requirements are made. (Author)

Descriptors :   (*INTEGRATED CIRCUITS, MICROELECTRONICS), DIELECTRIC FILMS, SILICON DIOXIDE, PHOTOENGRAVING, SPUTTERING, METAL FILMS, RELIABILITY(ELECTRONICS), SILICON, TANTALUM

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE