Accession Number : AD0752783
Title : Characterization of IR Windows.
Descriptive Note : Final technical rept.,
Corporate Author : LITTLE (ARTHUR D) INC CAMBRIDGE MASS
Personal Author(s) : Haggerty,John S. ; Peters,Edward T.
Report Date : NOV 1972
Pagination or Media Count : 34
Abstract : High resistivity GaAs is a candidate window material for high power CO2 lasers emitting at 10.6 micrometers. The measured absorptions at this wavelength have typically been in the range 0.01 to 0.025/cm. Other candidate materials have been prepared with absorptivities as low as 0.0006/cm. Consequently, a characterization program was undertaken to determine if the measured absorptivities are intrinsic to GaAs or alternatively are the result of a structural or chemical defect common to all melt grown, high resistivity GaAs. Evaluation samples from boules prepared under a wide range of growth conditions were supplied. Characterization procedures emphasized direct observation of structure, using techniques having successively higher limits of resolution; methods included optical and infrared microscopy, X-ray topography and transmission electron microscopy. (Author)
Descriptors : (*INFRARED WINDOWS, GALLIUM ARSENIDES), (*INFRARED LASERS, INFRARED WINDOWS), GAS LASERS, INFRARED OPTICAL MATERIALS, CRYSTAL DEFECTS, ABSORPTION, OPTICAL PROPERTIES
Subject Categories : Lasers and Masers
Distribution Statement : APPROVED FOR PUBLIC RELEASE