Accession Number : AD0753916

Title :   High Resolution Detection of Trapped Electron Charges in SiO2 by Scanning Electron Microscopy.

Descriptive Note : Research and development technical rept.,

Corporate Author : ARMY ELECTRONICS COMMAND FORT MONMOUTH N J

Personal Author(s) : Ahlstrom,E. R. ; Wheeler,W. S. ; Cook,C. F.

Report Date : OCT 1972

Pagination or Media Count : 12

Abstract : NICS COMMAND FORT MONMOUTH N JHigh Resolution Detection of Trapped Electron Charges in SiO2 by Scanning Electron Microscopy.Research and development technical rept.,Ahlstrom,E. R. ;Wheeler,W. S. ;Cook,C. F. ;ECOM-4036DA-1-B-662703-A-4401-B-662703-A-44003(*silicon dioxide, space charge), electrons, electron irradiation, ultraviolet radiation, electron microscopy, dielectric filmselectron microscopy, electronic scannersA novel method for detection of trapped charges in silicon dioxide (SiO2) is described. Traps that exist in the oxide are first charge by low energy electron bombardment. Then, illumination will ultraviolet (UV) light through a mask produces a latent image in the oxide. Subsequent exposure to a scanning electron microscope (SEM) reads out the image. The image sharpness is related to trap density. (Author)

Descriptors :   (*SILICON DIOXIDE, SPACE CHARGE), ELECTRONS, ELECTRON IRRADIATION, ULTRAVIOLET RADIATION, ELECTRON MICROSCOPY, DIELECTRIC FILMS

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE