Accession Number : AD0754110

Title :   Investigation of Impurities in Thermally Grown SiO2.

Descriptive Note : Final rept. 3 Jan 72-3 Jan 73,

Corporate Author : BATTELLE COLUMBUS LABS OHIO

Personal Author(s) : Baxter,R. D.

Report Date : JAN 1973

Pagination or Media Count : 76

Abstract : The effects of HCl processing on the quality and electrical stability of thermally grown SiO2 layers on Si were investigated electrically by MOS capacitance measurements and analytically by Secondary-Ion Mass Spectrometry (SIMS). The results indicate that the addition of 1 to 10 mole percent of HCl to the oxidizing atmosphere during the thermal oxidation of Si affects both the amount of Na incorporated into the growing oxide and the susceptibility of the oxide to the effects of 'excess' Na introduced during postoxidation processing. The passivation of HCl-processed oxides against positive ion instability appears to occur by two mechanisms. At HCl/O2 ratios approximately = or < 5 percent, excess Na is 'trapped' or 'neutralized' by Cl incorporated into the oxide, while at HCl/O2 ratios of about 10 percent, the penetration of surface Na into the oxide is impeded by the presence of grown-in Cl. (Author)

Descriptors :   (*SILICON DIOXIDE, ION BOMBARDMENT), (*SEMICONDUCTOR DEVICES, MANUFACTURING), IMPURITIES, MASS SPECTROSCOPY, DAMAGE, RADIATION EFFECTS, INTERFACES

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE