Accession Number : AD0754821
Title : Defect Characterization in III-V Compounds.
Descriptive Note : Final rept. 6 Dec 71-5 Dec 72,
Corporate Author : RCA LABS PRINCETON N J
Personal Author(s) : Abrahams,Marvin S.
Report Date : DEC 1972
Pagination or Media Count : 42
Abstract : Homoepitaxial films of GaAs deposited from the vapor phase grow by the nucleation and coalescence of islands. The islands coalesce to form a continuous layer when their thickness equals 750 plus or minus 250 A. A pseudomorphic layer of GaAs has been found in growths of undoped or lightly doped GaAs on heavily-doped (Te) substrates. The position of the dislocations was an order of magnitude closer to the original growth interface than that point where they are initially expected to be found in the crystal. Reversing the role of substrate and epitaxial layer by growing Se-doped layers of various concentrations onto undoped substrates has led to further insights: (a) strain-induced precipitation of dopant atoms occurs as a strain-relief mechanism, and (b) observations of orthogonal, cross-sectional specimens have revealed that dislocations for the zincblende structure are asymmetric. (Author)
Descriptors : (*SEMICONDUCTORS, EPITAXIAL GROWTH), (*GALLIUM ARSENIDES, DEFECTS(MATERIALS)), DISLOCATIONS, DOPING, TELLURIUM, SELENIUM, SUBSTRATES
Subject Categories : Crystallography
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE