Accession Number : AD0754879

Title :   Effective-Impurity Model of Optical Absorption Edges,

Corporate Author : PRINCETON UNIV N J DEPT OF PHYSICS

Personal Author(s) : Dow,John D. ; Hopfield,John J.

Report Date : 1972

Pagination or Media Count : 8

Abstract : A simple model of an amorphous or disordered semiconductor is presented in which the disorder is approximated by a distribution of effective impurities. In this model the disorder potential in a given region of the semiconductor is characterized by an effective charge, and the optical absorption in that region is calculated. The total absorption is then a statistical average (over effective charge distributions) of the absorption in the presence of a single effective-impurity. (Author)

Descriptors :   (*SEMICONDUCTORS, BAND THEORY OF SOLIDS), IMPURITIES, ABSORPTION SPECTRA

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE