Accession Number : AD0755224

Title :   Development of Infrared Sensitive Photoconductors.

Descriptive Note : Final rept.,

Corporate Author : NORTHWESTERN UNIV EVANSTON ILL DEPT OF PHYSICS

Personal Author(s) : Cashman,R. J.

Report Date : 06 DEC 1972

Pagination or Media Count : 18

Abstract : Three automatic bias controls were developed for use with silicon photovoltaic cells when operated with background flux present. One of these completely eliminates signal degradation even under very high background intensities. The transistorized version could be greatly improved by using field effect transistors and other recent developments in circuitry to reduce the noise level. Measurements were made of various properties of germanium photovoltaic diodes. The number at hand was small but all of them indicated that the degradation in signal with high background flux appears to increase with cell sensitivity. Automatic back-biasing appears necessary for optimum noise equivalent power. (Author)

Descriptors :   (*INFRARED PHOTOCONDUCTORS, *PHOTODIODES), SILICON, GERMANIUM, CONTROL SYSTEMS, XENON LAMPS

Subject Categories : Electrical and Electronic Equipment
      Optics

Distribution Statement : APPROVED FOR PUBLIC RELEASE