Accession Number : AD0755237

Title :   Low Temperature Growth of Cubic Gallium Nitride.

Descriptive Note : Annual rept.,

Corporate Author : NORTH CAROLINA STATE UNIV RALEIGH DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Littlejohn,Michael A. ; Hauser,John R. ; Andrews,James E.

Report Date : JAN 1973

Pagination or Media Count : 8

Abstract : A system is described which uses the organometallic compound triethygallium monammine (Ga(C2H5)3.NH3) for the chemical vapor deposition of thin films of gallium nitride. Measurements and studies of the physical characteristics and the electrical properties of films obtained from this process are described. The emphasis of this work is towards achieving low temperature (<600C) growth of gallium nitride in the cubic crystal structure. (Author)

Descriptors :   (*EPITAXIAL GROWTH, GALLIUM COMPOUNDS), (*SEMICONDUCTORS, CRYSTAL GROWTH), NITRIDES, SEMICONDUCTING FILMS, VAPOR PLATING, SINGLE CRYSTALS, OPTICAL PROPERTIES, ELECTRICAL PROPERTIES

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE