Accession Number : AD0755434

Title :   Vapor Phase Epitaxy of Gallium Arsenide.

Descriptive Note : Interim rept.,

Corporate Author : NAVAL RESEARCH LAB WASHINGTON D C

Personal Author(s) : Addamiano,Arrigo

Report Date : 26 JAN 1973

Pagination or Media Count : 10

Abstract : GaAs epitaxial layers of good semiconductor quality (comparable to bulk GaAs) have been prepared by the arsine method. The preparative technique and improvements are described. Overall, the arsine system has proved not only reliable but simple as well. The growth rates are reasonably high for practical device fabrication. (Author)

Descriptors :   (*GALLIUM ARSENIDES, *EPITAXIAL GROWTH), (*SEMICONDUCTORS, EPITAXIAL GROWTH), CHEMICAL REACTIONS, QUALITY CONTROL, ELECTRICAL PROPERTIES

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE