Accession Number : AD0755656

Title :   High Bias Studies on Metal-Insulator-Metal and Metal-Insulator-Semiconductor Tunnel Junctions,

Corporate Author : ILLINOIS UNIV URBANA COORDINATED SCIENCE LAB

Personal Author(s) : Depp,Steven Wade

Report Date : MAY 1972

Pagination or Media Count : 125

Abstract : Tunnel junctions were fabricated on the grown-oxides of both cleaved single-crystal silicon and evaporated aluminum and have been studied over a wide bias range. At low biases the previously reported inelastic and self-energy structure is observed, while at intermediate biases tunneling into interface states is identified in p-type silicon junctions. At high biases both silicon and aluminum junctions display behavior which cannot be understood within the framework of the average potential barrier model' in particular, aluminum junctions with lead counterelectrodes show both anomalous structure and hysteresis in their I-V characteristics. To explain this behavior, a model is proposed in which (responant) tunneling proceeds via the energy levels of mobile impurities in the barrier. Using this model, the hysteresis data is analyzed in detail in order to extract parameters describing the position and energy distribution of the impurities. These parameters obtained from the hysteresis data are found to simultaneously predict the anomalous I-V structure, indicating the common origin of both effects. (Author)

Descriptors :   (*TUNNELING(ELECTRONICS), INTERFACES), SEMICONDUCTORS, BAND THEORY OF SOLIDS, SILICON, ALUMINUM, IMPURITIES, MATHEMATICAL MODELS, THESES, CRYOGENICS

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE