Accession Number : AD0755806

Title :   Power Capability of Electron Beam-Semiconductor Amplifiers using Large Area Diodes.

Descriptive Note : Technical rept.,

Corporate Author : ARMY ELECTRONICS COMMAND FORT MONMOUTH N J

Personal Author(s) : Weiner,Maurice

Report Date : NOV 1972

Pagination or Media Count : 40

Abstract : Design equations have been formulated electron beam-semiconductor amplifiers in which large area diodes are used for enhancement of output power. Both Class A and Class B modes (as well as video) are treated. Both average and peak power are considered. Corrections to the doping density caused by velocity field dependence are taken into account. Numerical examples are given. (Author)

Descriptors :   (*POWER AMPLIFIERS, SEMICONDUCTOR DIODES), ELECTRON TUBE TARGETS, ULTRAHIGH FREQUENCY, RADIOFREQUENCY POWER, MODULATION, ELECTRON BEAMS

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE