Accession Number : AD0756432

Title :   A Novel Monolithic Silicon Vapor Chemical Process - Silicon-Nitric Oxide-Hydrogen Fluoride.

Descriptive Note : Research and development technical rept.,

Corporate Author : ARMY ELECTRONICS COMMAND FORT MONMOUTH N J

Personal Author(s) : Glendinning,William B. ; Pharo,Wellington B. ; Yarbrough,David W.

Report Date : DEC 1972

Pagination or Media Count : 45

Abstract : HIC INTEGRATED CIRCUIT (MIC) technology. The low temperature (25 C) process was derived from the reaction of hydrogen fluoride (HF) and nitrogen oxide (NO and NO2) with Si. The Si oxide films, thus grown, can be used as drop out impurity diffusion-mask materials in fabricating n-p junction diodes. The surface electronic stabilizing feature of the film is evaluated in terms of recombination-generation reverse bias currents and in terms of trapped insulator charge and interface states. Electrical voltage-current characteristics of diodes compare favorably with the analogous thermal oxide stabilized type. Because the oxide growth mechanism itself is photosensitive, the chemical reaction has potential use in relation to photoresistless IC processing. Finally, from a device reliability point-of-view, Auger and scanning electron microscopic analysis demonstrate the new process as an ultrasensitive chemical diagnostic technique for delineating Si-surface contamination. (Author)

Descriptors :   (*INTEGRATED CIRCUITS, MANUFACTURING), (*SILICON DIOXIDE, DEPOSITION), (*DIELECTRIC FILMS, *DEPOSITION), MASKING, ETCHING, OXIDATION, NITROGEN OXIDES, SEMICONDUCTOR DEVICES

Subject Categories : Electrical and Electronic Equipment
      Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE