Accession Number : AD0756876

Title :   Evaporated Copper Contacts to Cadmium Sulphide,

Corporate Author : WASHINGTON UNIV SEATTLE DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : McCarthy,Steven J. ; Lind,Eric ; Yee,Sinclair S.

Report Date : DEC 1972

Pagination or Media Count : 33

Abstract : The electric, photoelectric, and electroluminescence properties of Cu contacts evaporated onto CdS have been measured. Diffusion potentials of approximately 1.0 ev were found; the current transport was found to be via tunneling; the backwall spectral response of the short-circuit current was between .55 microns and 1.05 microns; and electroluminescence was observed between .75 microns and 1.0 microns at quantum efficiencies of approximately 10 to the minus 8th power photons per electron. These results are compared to the characteristics of a Cu-CdS Schottky barrier and a Cu2S-CdS heterojunction. This comparison shows that a Cu-CdS Schottky barrier does not always occur when Cu is evaporated onto CdS. Instead, the Cu can react chemically with the CdS to form a Cu2S layer underneath the evaporated copper contact resulting in a Cu2S-CdS heterojunction. (Author)

Descriptors :   (*SEMICONDUCTOR DEVICES, ELECTRIC CONNECTORS), (*CADMIUM SULFIDES, ELECTRIC CONNECTORS), ELECTRICAL PROPERTIES, CAPACITANCE, ELECTROLUMINESCENCE, BAND THEORY OF SOLIDS, VAPOR PLATING, COPPER

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE