Accession Number : AD0756932

Title :   Tunnel Diode and Its Microwave Amplification and Oscillation. Part 1,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Wang,Shih-Chieh

Report Date : 26 FEB 1973

Pagination or Media Count : 27

Abstract : The tunnel diode is a new type of semiconductor device. Its operating theory is based on the penetration of electrons through the narrow p-n junction barrier by quantum mechanical tunneling. At present, more than 350 kinds of tunnel diodes are listed as commodities among which, those used in the microwave area have a resistive cutoff frequency approaching 30 GHz. The characteristic parameters of tunnel diodes used in the microwave area are shown in order to indicate the present level of tunnel diode development.

Descriptors :   (*TUNNEL DIODES, MICROWAVE EQUIPMENT), SEMICONDUCTOR DEVICES, MICROWAVE AMPLIFIERS, MICROWAVE OSCILLATORS, RELIABILITY(ELECTRONICS), BAND THEORY OF SOLIDS, TUNNELING(ELECTRONICS), CHINA

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE