Accession Number : AD0757572
Title : Theoretical and Experimental Investigation of Transferred-Electron Amplifiers.
Descriptive Note : Technical rept.,
Corporate Author : MICHIGAN UNIV ANN ARBOR ELECTRON PHYSICS LAB
Personal Author(s) : Talwar,A. K.
Report Date : DEC 1972
Pagination or Media Count : 256
Abstract : FIERS. Both subcritically doped as well as supercritically doped devices are considered. A large-signal analysis of subcritically doped, negative conductance-type devices is developed. The analysis is one-dimensional and includes the effects of diffusion, where the diffusion coefficient is dependent upon the electric field. First-order nonlinear equations involving the dc and RF electric fields in the material are obtained for given dc and RF currents driven through the diode. The equations are solved on a digital computer and the results are presented. Various dc and RF characteristics of the diodes are examined. The effects of diffusion, bandwidth considerations, the effects of bias, temperature effects and the effects of doping density are discussed. The experimental study of stable negative conductance amplifiers is presented.
Descriptors : (*SEMICONDUCTOR DEVICES, *MICROWAVE AMPLIFIERS), GALLIUM ARSENIDES, DOPING, AVALANCHE DIODES, X BAND, ELECTRICAL PROPERTIES
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE