Accession Number : AD0757749

Title :   Schottky Barrier Diodes for Electron Beam Semiconductor Applications.

Descriptive Note : Final rept. 1 Oct 71-30 Sep 72,

Corporate Author : RCA LABS PRINCETON N J

Personal Author(s) : Siekanowicz,Wieslaw W. ; Huang,Ho-Chung ; Enstrom,Ronald E. ; Martinelli,Ramon U. ; Ponczak,Samuel

Report Date : DEC 1972

Pagination or Media Count : 91

Abstract : Experimental and theoretical studies show that the current-gain and frequency response of electron-beam-semiconductor Schottky barrier diodes are better than those of pn junctions. The lower gain of the latter devices is attributed to recombination losses in the p+ layer. High current gains (about 1500) were measured for silicon, gallium arsenide, and gallium arsenide phosphide Schottky diodes. Theoretical amplifier designs, based on measured current-gain characteristics, have shown that gallium arsenide phosphide does not provide significant improvements of gain linearity or efficiency over silicon. Gallium arsenide offers substantial increases of bandwidth over silicon and is less susceptible to deterioration resulting from temperature cycling and beam bombardment. Therefore, further development of gallium arsenide electron-beam-semiconductor targets is recommended. (Author)

Descriptors :   (*SEMICONDUCTOR DIODES, ELECTRICAL PROPERTIES), GALLIUM ARSENIDES, PHOSPHIDES, SILICON, SEMICONDUCTOR DEVICES, RADIOFREQUENCY AMPLIFIERS, ELECTRON TUBE TARGETS, ELECTRON BEAMS

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE