Accession Number : AD0757873
Title : Comparison of the Detectivities of a P-N Junction Diode and a Schottky Internal Photoemission Diode under Background-Limited Conditions.
Descriptive Note : Rept. for Jan-Jun 72,
Corporate Author : AEROSPACE CORP EL SEGUNDO CALIF LAB OPERATIONS
Personal Author(s) : Seib,David H.
Report Date : 09 OCT 1972
Pagination or Media Count : 34
Abstract : The background-limited detectivities of ideal Schottky internal photoemission diodes and p-n junction diodes are compared over the wavelength range 1 to 10 micrometers. The Schottky internal photoemission diode is found to have a detectivity one to two orders of magnitude less than the p-n junction device. The detectivities of the two detectors under nonbackground-limited conditions are also compared, and a brief discussion of the functional form of the quantum yield for the Schottky device is given. (Author)
Descriptors : (*INFRARED DETECTORS, PERFORMANCE(ENGINEERING)), (*PHOTODIODES, INFRARED DETECTORS), PHOTOSENSITIVITY, PHOTOELECTRIC EFFECT
Subject Categories : Electrical and Electronic Equipment
Infrared Detection and Detectors
Distribution Statement : APPROVED FOR PUBLIC RELEASE