Accession Number : AD0757873

Title :   Comparison of the Detectivities of a P-N Junction Diode and a Schottky Internal Photoemission Diode under Background-Limited Conditions.

Descriptive Note : Rept. for Jan-Jun 72,

Corporate Author : AEROSPACE CORP EL SEGUNDO CALIF LAB OPERATIONS

Personal Author(s) : Seib,David H.

Report Date : 09 OCT 1972

Pagination or Media Count : 34

Abstract : The background-limited detectivities of ideal Schottky internal photoemission diodes and p-n junction diodes are compared over the wavelength range 1 to 10 micrometers. The Schottky internal photoemission diode is found to have a detectivity one to two orders of magnitude less than the p-n junction device. The detectivities of the two detectors under nonbackground-limited conditions are also compared, and a brief discussion of the functional form of the quantum yield for the Schottky device is given. (Author)

Descriptors :   (*INFRARED DETECTORS, PERFORMANCE(ENGINEERING)), (*PHOTODIODES, INFRARED DETECTORS), PHOTOSENSITIVITY, PHOTOELECTRIC EFFECT

Subject Categories : Electrical and Electronic Equipment
      Infrared Detection and Detectors

Distribution Statement : APPROVED FOR PUBLIC RELEASE